Ho^(3+)掺杂Sc_2SiO_5激光晶体生长与光谱性能研究

Growth and Spectral Properties of Sc_2SiO_5 Laser Crystal Doped with Ho^(3+)

采用提拉法分别生长了具有高光学质量的0.5at%和1.0at%的Ho∶Sc2SiO5(Ho∶SSO)激光晶体。研究表明晶体空间群为C2/c,晶胞参数为a=0.99723 nm,b=0.64261 nm,c=1.16843 nm,β=103.9°。Ho3+在SSO基质中的分凝系数为0.82。Ho∶SSO晶体在2085 nm处发射截面为1.12×10-20cm2,发射光谱呈现一个1850~2150 nm的宽发射带。当粒子数反转比率β=0.25时,增益截面σg即开始出现正增益。综合评估了晶体的激光性能,表明Ho∶SSO晶体是一种有潜力的2μm波段激光介质。

Sc2SiO5 ： 0.5at% Ho （Ho： SSO） and Sc2SiO5 ： 1.0at% Ho bulk crystals were obtained by Czochralski method. The results indicate that the space group of Ho： SSO crystal is C2/c. The cell parameters were calculated to be a=0.99723 nm,b=0.64261 nm,c=1.16843 nm,β=103.9°. The segregation coefficient of Ho3 ＋ in SSO host were calculated to be 0.82. The emission cross section in 2085 nm is 1.12 ×10^-20cm2. The broad emission spectrum is extended from 1850 nm to 2150 nm. When the inversion ratio equals to 0.25, the gain cross-section appeared to be positive. Laser properties were evaluated and all these data indicated that Ho： SSO is promising for 2 μm laser operation.