Ga源温度对共蒸发三步法制备Cu(In,Ga)Se_2太阳电池的影响

Effects of Ga-source Temperature on Properties of Cu(In,Ga)Se_2 Thin Films and Solar Cell Fabricated by Three-step Co-evaporation Technique

利用共蒸发三步法制备了Cu（In,Ga）Se2（CIGS）薄膜,并通过调整制备工艺中的一、三步的金属镓（Ga）的温度,改变Ga含量的梯度分布,研究不同梯度分布对CIGS薄膜及电池性能的影响。从而优化了电池带隙梯度分布,使电池的开路电压Voc在提高的同时,最大程度的减小了Jsc的损失。优化后薄膜表面的结晶情况得到改善,电池的结界面和二极管特性也得到相应的提高。量子效率测试发现,优化后的CIGS太阳电池在较长波段中（520~1100nm）的光子吸收损失大大减小。

Tthe Cu（In,Ga） Se2（CIGS） thin film was fabricated through three-step co-evaporation method,and the influence of different Ga gradient distribution on the performance of CIGS thin film and solar cell was also examined by adjusting the temperature of Ga source in the first and third-stage of the process to change Ga gradient distribution.The adjustment optimizes Ga gradient distribution,which can reduce the Jscloss to the greatest extent while enhance the open circuit voltage（Voc）.Crystal of CIGS surface is improved,and the diode junction and interface characteristics of cell are also correspondingly enhanced.Quantum efficiency test also shows that the photon absorption loss of optimized CIGS solar cell is greatly reduced in the longer wavelength（520-1100 nm）.