铝膜溅射功率对铝诱导CdZnTe薄膜结构及性能影响

Effect of Aluminum Sputtering Power on CdZnTe Films by Al-induced Crystallization

采用磁控溅射法制备CdZnTe先驱薄膜/金属Al膜的层叠结构,利用铝诱导技术制备CdZnTe薄膜。通过原子力显微镜、X射线衍射、Raman光谱仪和半导体特性分析系统,研究了铝膜溅射功率对铝诱导CdZnTe薄膜结构及性能的影响。结果表明:随着铝膜溅射功率的增加,铝诱导CdZnTe薄膜表面的薄膜结晶质量、晶粒尺寸和薄膜电阻率先增大后减小。铝诱导晶化的效果与铝膜溅射功率有关,当铝膜溅射功率达到100 W,CdZnTe薄膜的晶化诱导效果最显著,薄膜结晶质量最好,晶粒尺寸最大。

CdZnTe precursor film/metal aluminum film was deposited by magnetron sputtering,and polycrystalline CdZnTe films were obtained by Aluminum-Induced Crystallization（AIC）.The influences of the aluminum sputtering power on CdZnTe film have been studied using atomic force microscopy（AFM）,X-ray diffraction（XRD）,Raman spectrometer and semiconductor characterizaton system.The results show that as aluminum sputtering power increases,crystal quality,grain size and resistivity of CdZnTe films first increases,then decreases.The induced mechanism of AIC of CdZnTe film is that the incorporation of energetic aluminum atoms,Te and ZnTe phase in precursor layer,results in ZnAl2Te4heterogeneous nucleation in CdZnTe precursor.The induced effect of AIC of CdZnTe is depended of the sputtering power of aluminum film.As sputtering power of aluminum film is 100 W,the induced effect of AIC is optimal.