摘要
In this paper,we propose and demonstrate a2 9 2 optical Benes switching unit based on two nested silicon microring resonators(MRRs)monolithically integrated on a silicon-on-insulator(SOI)wafer.High extinction ratios(ERs)of about 44.7/38.0 dB and low crosstalk values of about-37.5/-45.2 dB at cross/bar states are obtained with the fabricated device.The operation principle is theoretically studied and the switching function is verified by system demonstration experiments with 10 and12.5 Gb/s non-return-to-zero(NRZ)signals.The switching speed on the order of gigahertz based on free carrier effect in silicon is also experimentally demonstrated.
In this paper, we propose and demonstrate a 2 × 2 optical Benes switching unit based on two nested silicon microring resonators （MRRs） monolithically integrated on a silicononinsulator （SOI） wafer. High extinction ratios （ERs） of about 44.7/38.0 dB and low crosstalk values of about -37.5/-45.2 dB at cross/bar states are obtained with the fabricated device. The operation principle is theoretically studied and the switching function is verified by system demonstration experiments with 10 and 12.5 Gb/s nonreturntozero （NRZ） signals. The switching speed on the order of gigahertz based on free carrier effect in silicon is also experimentally demonstrated.
基金
supported in part by the National Natural Science Foundation of China (61125504 and 61235007)
in part by MoE Grant (20110073110012)
in part by Minhang Talent Program
关键词
切换功能
消光比
谐振器
微环
嵌套
非阻塞
串音
器具
Optical switching unit
Microringresonator
High extinction ratio
Low crosstalk
