Study of the Static Properties I-V of Mosfet

Study of the Static Properties I-V of Mosfet

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作者 Ouassila Benzaoui

机构地区 Technology Department Sciences Institute Department of Physics

出处《材料科学与工程（中英文B版）》 2013年第8期504-509,共6页 Journal of Materials Science and Engineering B

关键词 MOSFET 静态特性 I-V 场效应晶体管数值模拟程序 MOS晶体管温度上升静电性能 MOSFET, static proprieties, performances.

参考文献12

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材料科学与工程（中英文B版）

2013年第8期

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