摘要
研究了Ni/HfO2(10 nm)/Pt存储单元的阻变特性和机理.该器件具有forming-free的性质,还表现出与以往HfO2(3 nm)基器件不同的复杂的非极性阻变特性,并且具有较大的存储窗口值(>105).存储单元的低阻态阻值不随单元面积改变,符合导电细丝阻变机理的特征.采用X射线光电子能谱仪分析器件处于低阻态时的阻变层HfO2薄膜的化学组分以及元素的化学态,结果表明,Ni/HfO2/Pt阻变存储器件处于低阻态时的导电细丝是由金属Ni导电细丝和氧空位导电细丝共同形成的.
Electric characteristics and resistive switching mechanism of Ni/HfO2/Pt cell are investigated. The cell has a forming-free property and shows an abnormal non-polar switching behavior. A high ON/OFF resistance ratio（＆gt; 105） is obtained. The resistance of the on-state is independent of cell size, which implies that a conductive filament is formed in HfO2film. X-ray photoelectron spectroscopy is used to investigate the compositions and valences of Ni and Hf in HfO2film for the on-state cell. The results show that there is a hybrid filament comprised of a Ni filament and an oxygen vacancy filament in the HfO2film for the on-state.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2014年第14期291-297,共7页
Acta Physica Sinica
基金
国家高技术研究发展计划(批准号:2011AA010403)资助的课题~~
关键词
阻变存储
二氧化铪薄膜
导电细丝
resistive random access memory
hafnium dioxide film
conductive filament
