不同生长模式对AlN薄膜质量的影响

Influence of AlN Growth Model to Crystal Quality

采用传统生长模式和脉冲生长模式开展了蓝宝石衬底上AlN薄膜外延生长研究。通过XRD、透射谱、Raman等分析手段,研究了不同生长模式对AlN薄膜质量的影响,研究发现采用脉冲生长模式的样品与采用传统生长模式的样品相比,晶体质量显著地提高,AlNω(102)的FWHM从2093 arcsec减少到835 arcsec,有效的限制了深能级缺陷。由于采用脉冲生长模式样品中的位错密度较小,所以样品中的残余应力略有提高。研究结果表明脉冲生长模式能有效的提高蓝宝石衬底上AlN晶体质量。

Tradition and pulse mode were investigated for the growth of AlN layers on sapphire substrate. Even though the AlN layers were grown under the same conditions. The crystalline quality was investigated by XRD raman and transmission spectrum. There is a clear relationship between the dislocation density and the qualityof AlN films. Furthermore, it was found that dislocation were suppressed by pulse mode. AlNω（102）FWHM from 2093 arcsec release to 835 arcsec. The pulse mode method is an effective way to improve the crystalline quality of the AlN expilayers.