基于常温磁控溅射法的二氧化钒薄膜制备方法研究

Vanadium Dioxide Thin Film Prepared by Magnetron Sputtering at Room Temperature

采用常温磁控溅射法制备金属钒薄膜,然后在合适的氧气氛围下对其进行退火氧化处理,最终在非晶玻璃衬底上制备出具有相变的高性能二氧化钒(Vanadium Dioxide,VO_2)薄膜。X射线衍射(X-Ray Diffraction,XRD)测试结果表明,所制薄膜的主要成分为VO_2;扫描电子显微镜(Scanning Electron Microscope,SEM)测试结果表明,所制薄膜的结晶性良好,晶粒粗细均匀。该薄膜在室温下的红外光透过率(2400nm处)为67%,在高温下的红外光透过率(2400 nm处)为9%。其透过率差值为58%,因此具有良好的红外透过率调节能力。同时还测试分析了薄膜光学转变与电学转变的差异,发现电学转变温度比光学转变温度高4.7℃。该方法适合大面积VO_2薄膜的制备,对智能窗的研究与应用具有重要意义。

A vanadium metal thin film is prepared by using magnetron sputtering at room temperature. Then, the film is annealed in a suitable oxide atmosphere. Finally, a high quality vanadium dioxide thin film with phase transition is prepared on an amorphous glass substrate. The X-Ray Diffraction （XRD） test result shows that the main component of the prepared film is vanadium dioxide. The Scanning Electron Microscope （SEM） test result shows that the prepared film is well crystallized and distributed. The film has its infrared transmittance of 67% at 2400 nm wavelength at room temperature and has its infrared transmittance of 9% at the same wavelength at room temperature. The transmittance difference is 58%. Therefore, it has a good infrared transmittance adjustment ability. In addition, the difference between the optical transition and the electric transition of the film is analyzed. It is found that its electric transition temperature is 4.7 ℃ higher than its optical transition temperature. This method is suitable to prepare large area vanadium dioxide films and is of significance to the research and application of smart windows.