能量转换器件参数对氚和^(147)Pm辐射伏特同位素电池性能影响

Influences of the properties of c-silicon PNdiode on the energy conversion of tritium and ^(147)Pm betavoltaic

采用理论模拟和实验方法,开展单晶硅PN结能量转换器件的结构参数和性能对氚源和147Pm源加载下的同位素电池输出性能影响研究.结果显示:同样的能量转换器件参数(包括表面钝化层厚度、顶层掺杂浓度和厚度、基层掺杂浓度和厚度、器件的漏电流等)对不同加载放射源的辐伏同位素电池输出性能影响相差较大.该结果对选择不同加载源的辐伏同位素电池能量转换器件设计具有较大指导和参考作用.

A comparison analysis of the influence of the properties of c-silicon PN diode on the beta-voltaic conversion of tritium and Pm-147was carried out based on simulation and experimental results.The analyzed parameters include the dark leakage current,thickness of the surface passivation layer,dopant concentration and thickness of the top P＋layer and N layer.The results indicated that the same property have different influence on the performance betavoltaic when loaded at different radiation sources.