管式IGBT水冷散热器性能的数值模拟研究

Numerical simulation on performance of tubular water-cooled radiator for IGBT module

为避免平板式水冷散热器可能因虚焊而存在泄漏的风险,设计了一款管式水冷散热器。以管式水冷散热器为研究对象,利用HyperMesh软件建立仿真分析用的网格模型,再采用FLUENT软件对流速分布、压力分布和温度场分布进行了分析,对比研究了流量、管材和底板厚度对IGBT芯片最高温度的影响。研究结果表明,压降基本上呈流量的二次方关系增长,芯片最高温度降低趋势随着流量增加由快速变为缓慢,芯片最高温度随管材的导热系数提高而降低,底板厚度对芯片最高温度的影响很小,采用单根管路的水冷散热器均温性不佳。通过对压力损失的分析,提出了单根管路改为双根管路的优化改进方案,管路压降较改进之前降低约80%,且温度均匀性更好。该研究结果可为管式水冷散热器的设计提供指导。

In order to avoid plate type water-cooled radiator may have the risk of leakage because of the virtual welding, a tubular water- cooled radiator was designed. Take tubular water-cooled radiator as the research object, the gird model for numerical simulation was established by using HyperMesh software, and then the velocity, pressure and temperature distribution of tubular water-cooled radiator were analyzed by FLUENT software. Effects of flow rate, pipe material and thickness of the base plate on the highest temperatures of insulated gate bipolar transistor（IGBT） chip were studied. The research results show that the pressure drop is virtually a quadratic relationship between the flow rate, the highest chip temperature reducing trend with the increase of the flow rate from fast to slow, and the highest chip temperature decreases with the increase of thermal conductivity of pipe material, the plate thickness contribute little to the highest chip temperature, and the temperature uniformity of water-cooled radiator with single pipeline is poor. Through the analysis of the pressure loss, the optimization of a single pipeline to dual pipeline scheme was put forwarded. The scheme can make the pipeline pressure drop by about 80% compared with the previous, and have better temperature uniformity. The research results can provide guidance for the design of the tubular water-cooled radiator.