用于成像系统的高矢高透镜阵列光刻技术(英文)

Fabrication of High Relief Depth Lens Array Used on Imaging Systems

在移动掩模光刻技术的基础上,提出一种可用于成像系统的高矢高透镜阵列制备的二次光刻方法。二次光刻分别用于减小抗蚀剂表面粗糙度和借助移动掩模光刻制备高矢高透镜阵列。通过这种方法,制备了矢高254μm的透镜阵列。透镜矢高约为传统移动掩模光刻技术制备透镜阵列矢高的二倍。进而,制备的透镜阵列被用于集成成像系统,获得了高质量的三维图像。这一结果很好地证明了此种二次光刻方法可用于成像系统高矢高透镜阵列的制备,具有较好的应用前景。

Based on the moving mask lithography,a two times lithographic approach is proposed to achieve high-performance lens array used on integral imaging.The first lithography is used to smooth the undulation of the thick resist and the second lithography is used to fabricate lens array via moving mask lithography method.By this method,the lens array with relief depth of 254 μm,which is about two times of that fabricated by conventional method,can be achieved.Furthermore,the lens array is used on integral imaging systems and vivid three-dimension image is achieved.It is well demonstrated that the two times lithography has great potential on the fabrication of high-performance lens array,which can be applied on imaging systems.