摘要
We demonstrate an InP/InGaAs PIN photodetector with enhanced quantum efficiency by assembling silicon resonant waveguide gratings for the application of polarization sensitive systems. The measured results show that quantum efficiency of the photodetector with silicon resonant waveguide gratings can be increased by 31.6% compared with that without silicon resonant waveguide gratings at the wavelength range of 1500 to 1600 nm for TE-polarization.
We demonstrate an InP/InGaAs PIN photodetector with enhanced quantum efficiency by assembling silicon resonant waveguide gratings for the application of polarization sensitive systems. The measured results show that quantum efficiency of the photodetector with silicon resonant waveguide gratings can be increased by 31.6% compared with that without silicon resonant waveguide gratings at the wavelength range of 1500 to 1600 nm for TE-polarization.
基金
supported in part by the National Basic Research Program of China(No.2010CB327600)
the National Natural Science Foundation of China(Nos.61020106007 and 61274044)
the Natural Science Foundation of Beijing,China(No.4132069)
Program of Key International Science and Technology Cooperation Projects(No.2011RR000100)
the Fundamental Research Funds for the Central University(No.2011RC0403)
111 Project of China(No.B07005)
Specialized Research Fund for the Doctoral Program of Higher Education of China(SRFDP)(No.20130005130001)
the Program for Chang Jiang Scholars and Innovative Research Team in University,MOE(No.IRT0609)
