Mg_xZn_(1-x)O陶瓷靶材的制备

Preparation of MgO-doped ZnO(M_gxZn_(1-x)O) Ceramic Targets

采用传统的常压固相烧结方法制备了MgZnO陶瓷靶材,研究了MgO掺杂量及烧结温度对MgZnO陶瓷靶材的微观结构、表面形貌、力学性能和致密度的影响。通过XRD测定靶材相结构,SEM观察靶材的断面形貌,万能实验机测量靶材的抗弯强度,维氏显微硬度仪测量靶材的维氏硬度,阿基米德排水法测量靶材密度等方法对MgZnO靶材的性能进行了分析表征。结果表明,当掺杂量为12%、烧结温度为1 450℃时所制备的陶瓷靶材最优,其各项性能均表现良好,抗弯强度为94.56MPa,维氏硬度为250.70HV0.3,相对密度为96.65%,并在最佳条件下制备出MgO摩尔掺杂比为12%的MgZnO陶瓷靶材,采用射频磁控溅射方法,于室温条件下在石英衬底上制备了MgZnO透明薄膜,利用XRD、紫外可见分光光度计等测试手段,测量薄膜的结晶性能、光学性能,制备出的薄膜结晶性能良好,薄膜在可见光区域具有较高的透过率,平均都超过80%,适用于TFT的有源层。

MgZnO ceramic targets were prepared by sintering. The effects of the MgO-doped amount and sintering temperature on the mechanical properties, the density as well as the microstructure of the sintered target were studied. The phase structure was analyzed by X-ray diffraction, the fracture morphology was observed by SEM, the bending strength was measured by a universal testing machine, the hardness was measured by a Vickers microhardness instrument and the density was measured using the Archimedes water displacement method. The experimental results show that the optimal MgO doping amount is 12% and sintering temperature is 1 450 ℃, resulting in a bending strength of 94. 56 MPa, a Vickers hardness of 250. 70 kg/mm2 and a relative density of 96. 65% in final℃ sample, which is excellent as a target material for sputtering. The Mg-doped ZnO transparent conductive thin films were prepared on quartz substrates by RF magnetron sputtering with a MgZnO （12 % MgO） ceramic target. The average light transmittance was above 80 % in the visible light range, which is good and suitable to be an active layer of the TFT.