高温加热对于纯铝薄膜表面结构的影响研究

Effect of Heating Treatment on the Structure of the Al Thin Film

在半导体材料中,金属薄膜尺寸缩小会使通电时的电流密度升高而导致材料焦耳热迅速增加,从而影响金属薄膜表面结构。针对纯铝薄膜进行了高温加热试验,模拟实际运行中的温度影响,并分析了影响机理。试验结果表明随着加热温度和加热时间的增加会使铝膜表面原子迁移能力增强,单位时间内原子积聚数量增加,从而导致小丘数量和体积增大。

The structure and surface of the Al thin film was affected by Joule heating owing to high current density in the semiconductor materials. Heating treatments were used to investigate the effect of high temperature on the structure of the Al thin film, and the mechanism was derived. It was noted that Al atomic diffusion was enhanced with increasing heating temperature and time, leading to accumulating more atoms in unit time,and hence forming more hillocks with larger diameters.