期刊文献+

二极管激光器阵列封装工艺对smile效应影响因素分析 被引量:4

Relation between smile effect and packaging of laser diode arrays
下载PDF
导出
摘要 Smile效应是限制二极管激光器阵列应用的一个重要因素。研究了激光器封装工艺对smile效应的影响,研究结果表明,造成smile效应的因素主要有两个:一是焊接过程中芯片的焊接压力不均匀;二是芯片与热沉的热膨胀系数不匹配。使用低膨胀系数的压条可以改善焊接过程中芯片压力的均匀性,而增大焊料凝固过程中的降温速率可以降低芯片与热沉的收缩量的差距,这两种方法都有利于改善smile效应。最后通过实验结果证明了以上方法在实际操作中是可行有效的。 Smile effect is a key problem that reduces the application of laser diode arrays. This paper presents the research on the relation between smile effect and the package technology. It is found that two main parameters affect the smile effect: the uneven pressure on laser chip in soldering and the mismatch of thermal expansion coefficient. Theoretically, the uneven of the pressure can be reduced by using low thermal expansion coefficient contact bar, and the shrinkage difference between laser diode chip and heat sink can be reduced by increasing the cooling rateof the solidification process. Both theoretical and experimental re suits show that these methods can significantly and fundamentally reduce the smile effect.
出处 《强激光与粒子束》 EI CAS CSCD 北大核心 2014年第3期24-27,共4页 High Power Laser and Particle Beams
基金 中国工程物理研究院高能激光科学与技术重点实验室基金项目(HEL2013-05)
关键词 低应变 smile效应 二极管激光阵列 封装 low strain smile effect laser diode arrays packaging
  • 相关文献

参考文献14

  • 1BachmannF,LoosenP,PopraweR.Highpowerdiodelaser[M].Berlin:SpringerVerlag,2007:40-45,131-135.
  • 2DiehlR.High-powerdiodelasers:fundamentals,technology,applications[M].Berlin:SpringerVerlag,2000:324-326.
  • 3TreuschHG,OvtchinnikovA,HeX,etal.High-brightnesssemiconductorlasersourcesformaterialsprocessing:stacking,beamshaping,andbars[J].IEEEJSelTopQuantum Electron,2000,6(7):601-614.
  • 4SchulzW,PopraweR.Manufacturingwithnovelhighpowerdiodelasers[J].IEEEJSelTopQuantum Electron,2000,6(7):696-705.
  • 5WetterN U.Threefoldeffectivebrightnessincreaseoflaserdiodebaremissionbyassessmentandcorrectionofdiodearraycurvature[J].Optics& LaserTechnology,2001,33(3):1812187.
  • 6JandeleitJ,WiedmannN.Reliabilityanddegradationmechanismsofhighpowerdiodelasers[C]//ProcofSPIE,1999,3626:217-221.
  • 7AlexeiM,VitalijL.Assemblycorrectinglaserilluminationfromalaserlightsourceandmethodforproducingassembly:U.S,7075739[P].2006-7-11.
  • 8谭昊,郭林辉,高松信,唐淳,武德勇,李建民,尹新启.kW级光纤耦合输出二极管激光器模块[J].强激光与粒子束,2012,24(11):2581-2584. 被引量:12
  • 9邓鑫李,刘云,尹红贺,张岩,顾媛媛,冯广智,单肖楠,王立军.半导体激光线阵弯曲矫正方法的理论分析与实验[J].中国激光,2008,35(4):505-508. 被引量:9
  • 10谭昊,郭林辉,李建民,高松信,唐淳,武德勇.基于mini-bar的光纤耦合实验研究[J].强激光与粒子束,2012,24(8):1821-1825. 被引量:7

二级参考文献28

  • 1方高瞻,马骁宇,王国宏,谭满清,蓝永生.准连续17kW808nm GaAs/AlGaAs叠层激光二极管列阵[J].中国激光,2004,31(6):649-653. 被引量:9
  • 2马华,曾晓东,安毓英.双半圆柱透镜准直半导体激光光束[J].中国激光,2006,33(7):937-940. 被引量:16
  • 3陈玖英,刘建国,张玉钧,刘文清,阚瑞峰,王敏,陈东,崔益本.调谐半导体激光吸收光谱自平衡检测方法研究[J].光学学报,2007,27(2):350-353. 被引量:22
  • 4苏宙平,楼祺洪,董景星,周军,魏运荣.激光二极管阵列的窄线宽、可调谐输出[J].中国激光,2007,34(6):751-754. 被引量:10
  • 5A. R. Holdsworth, H. J. Baker. Assessment of micro-lenses for diode bar collimation [C]. SPIE, 1997, 3000:209-214
  • 6J. F. Monjardin, K. M. Nowak, H. J. Baker et al.. Correction of beam errors in high power laser diode bars and stacks [J]. Opt. Express, 2006, 14(18):8178-8183
  • 7N. U. Wetter. Three-fold effective brightness increase of laser diode bar emission by assessment and correction of diode array curvature [J]. Optics & Laser Technology, 2001, 33(3):181-187
  • 8Su Zhouping, Lou Qihong, Dong Jingxing et al.. Beam quality improvement of laser diode array by using off-axis external cavity [J]. Opt. Express, 2007, 15(19):11776-11780
  • 9C. L. Talbot, M. E. J. Friese, D. Wang et al.. Linewidth reduction in a large-smile laser diode array [J]. Appl. Opt., 2005, 44(29):6264-6268
  • 10Haag M, K6hler B, Biesenbach J, et al. Novel high brightness fiber coupled diode laser device[C]//Proc of SPIE. 2007: 64560T,.

共引文献21

同被引文献34

引证文献4

二级引证文献6

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部