摘要
采用V掺杂半绝缘6H-SiC单晶衬底材料制备了平面电极型大功率SiC光导开关,用强度为150 μJ/mm2、波长为355 nm的脉冲激光对开关进行触发,在1~14 kV的外加电压范围内对光导开关的耐压特性、导通电阻等性能进行了研究.结果表明:随着开关外加电压的升高,开关的电流峰值呈现不断增大的趋势,当开关外加电压为14 kV时,电流峰值达185 A,对应的光导开关峰值功率为2.59 MW,开关的导通电阻约为22 Ω.
High power photoconductive semiconductor switches(PCSSs)were fabricated on V-doped semi-insulating 6HSiC single crystal.The 6H-SiC PCSS were measured by applying a bias voltage from 1kV to 14kV.The triggered laser was a 355nm pulse laser with an energy density of 150μJ/mm2.The peak photocurrent shows an increasing trend with improving the applied voltage.The peak photocurrent running through the PCSS and the calculated on-state resistance are 185Aand about 22Ω respectively when the applied voltage reaches 14kV,and the corresponding peak power is 2.59MW.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2014年第4期268-271,共4页
High Power Laser and Particle Beams
基金
中国科学院知识创新工程重要方向性项目(KGCX2-YW-206)
国家高技术发展计划项目
上海市科技启明星项目(13QA1403800)
上海硅酸盐研究所创新基金项目(Y39ZC1110G)
关键词
碳化硅
光导开关
导通电阻
峰值功率
silicon carbide
photoconductive semiconductor switch
on-state resistance
peak power