C掺杂浓度对ZnO薄膜电学和结构的影响

Effects of doping concentration on the structure and electrical property of ZnO∶C films

采用射频磁控溅射法在石英玻璃衬底上成功制备了不同C掺杂浓度的ZnO∶C薄膜,借助于X射线衍射仪(XRD)、霍尔测试(Hall)、X射线光电子谱(XPS)和拉曼散射光谱(Raman)等测试手段系统研究了ZnO薄膜的结构、电学以及拉曼特性并分析了C在ZnO薄膜中存在形式。结果表明,所有薄膜都呈纤锌矿结构并具有高度的c轴择优取向。随着C掺杂浓度的增加,薄膜的n型导电性能不断增强,其主要原因是ZnO薄膜中的C替代Zn位起施主作用。

Different concentration of ZnO∶C thin films were deposited on quartz glass substrates by a radio-fre-quency （RF）magnetron sputtering technique.The structure,Raman and electrical properties of ZnO∶C film were investigated by X-ray diffractometer,Raman scattering spectrum and Hall measurement system.Then, we explore the role of C in the ZnO∶C film.The results indicate that all films perform the ZnO wurtzite struc-ture with preferred c -axis orientation.The n-type conductivity enhances with the increase of C dopant,and the main explanation to be that C substitute for zinc site and act as donor.