基于0.18μm CMOS高压工艺的低压器件优化设计

Design and Application of CMOS Low Voltage Devices in High Pressure Process

产品设计时,是否能灵活应用低压器件与高压器件对一款成功的设计而言至关重要。设计一款多电源芯片,器件电压种类繁多,最高电源为±15 V,基于SMIC 0.18μm 40 V HV-LDMOS工艺,5 V低压器件版图采用优化设计,在±15 V电源下,在同一芯片上实现了电路的高低压转换,没有发生击穿漏电现象,并满足了各种器件的电特性指标,产品工作稳定、性能可靠,并且整体性能良好。

In the design of products,whether can flexible application of low voltage devices and high voltage devices of a successful design is vital.The design of the product is a multi power chip,device types,the maximum power is ±15 V,based on the SMIC 0.18 μm 40 V HV-LDMOS technology,5 V low voltage device layout with design optimization in the ±15 V power supply,on the same chip to realize the high and low voltage circuit switching,no the occurrence of leakage and breakdown,meet the electrical characteristics of various devices,products,stable work,reliable performance,and good overall performance.