摘要
传统栅控晶闸管(MCT)的制造工艺中存在阱区浓度调整与器件性能最大化之间的矛盾,提出了一种具有高电流上升率的制造工艺的优化,实现了具有更高正向电流能力与低阈值电压的MCT器件。结果表明该工艺制造的MCT在脉冲放电应用中电流上升率(di/dt)较传统工艺所制造的器件提高15%,最大工作温度降低33%,热逸散速度提高36%。
As there are contradictions among the adjustment of well concentrations and device performances,in the paper,an optimization of triple diffusion process for MCT with high di/dt is proposed,which can realize MCTs with high current ability and low threshold voltages.Meanwhile,the fabricated MCTs show a 15% rise in di/dt rate,a 33% reduction in maximum temperature and a 36% rise in heat runaway speed in pulsed power discharge.
出处
《电子与封装》
2014年第7期29-33,共5页
Electronics & Packaging
基金
国家科技重大专项(2011ZX02706-003)
预研项目(51308030407)
