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NAND flash service lifetime estimate with recovery effect and retention time relaxation 被引量：1

NAND flash service lifetime estimate with recovery effect and retention time relaxation
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摘要 A service life model of NAND flash and threshold voltage shift process is proposed to calculate the service life and endurance.The relationships among achievable program/erase(P/E) cycles,recovery time,bad block rate and storage time are analyzed.The achievable endurance and service life of a NAND flash are evaluated based on a flash cell degradation and recovery model by varying recovery time,badblock rate,and storage time.It is proposed to improve the service lifetime of solid state disk by both relaxing the bad block rate limitation and retention time while extending the recovery time.The results indicate that endurance can be improved by 17 times if the storage time guarantee is reduced from 10 a to 1 a with 105 s recovery time inserted between cycles. A service life model of NAND flash and threshold voltage shift process is proposed to calculate the service life and endurance. The relationships among achievable program/erase （P/E） cycles, recovery time, bad block rate and storage time are analyzed. The achievable endurance and service life of a NAND flash are evaluated based on a flash cell degradation and recovery model by varying recovery time, badblock rate, and storage time. It is proposed to improve the service lifetime of solid state disk by both relaxing the bad block rate limitation and retention time while extending the recovery time. The results indicate that endurance can be improved by 17 times if the storage time guarantee is reduced from 10 a to 1 a with 10 5 s recovery time inserted between cycles.
作者 步凯 陈怡然 徐晖 易伟 谢启友
机构地区 Department of Electrical and Computer Engineering School of Electronic Science and Engineering
出处 《Journal of Central South University》 SCIE EI CAS 2014年第8期3205-3213,共9页 中南大学学报（英文版）
基金 Project(61171017)supported by the National Natural Science Foundation of China
关键词 NAND flash ENDURANCE RETENTION recovery effect program/erase （P/E） cycle NAND闪存 保持时间 Flash 恢复效果 寿命估计 恢复时间 使用寿命 阈值电压漂移
分类号 TP333 [自动化与计算机技术—计算机系统结构]
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参考文献17

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  • 5SRINIVASAN J, CANON R S. Fvaluation of a flash storage filesystem on the cray XE-6[J ]. Procedia Computer Science, 2013, 9( 11 ) :186-195.
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  • 7ST Microeleetronics. Bad Hock management in NAND Flash memories [ Z \. EE Times-India, 2004 : 3-5.
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Journal of Central South University
2014年 第8期

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