基于新一代半导体GaN的高效率功率放大器的研制

Development of high efficiency power-amplifier based on new generation semiconductor GaN

近年来在无线通信、雷达等领域,对发射的功耗要求越来越苛刻,而产品可放置的空间越来越小,这就要求功率放大器要有更高的效率以及更高的工作结温,新一代宽禁带半导体材料GaN能够满足该要求。基于CREE公司的GaN功放管CGH40045研制了一款S频段的功率放大器,主要进行了功率匹配、散热考虑、杂散抑制的设计。最终的测试结果显示,在300 MHz的带宽内功率增益≥50 dB,饱和输出功率≥46 dBm,工作效率≥50%,比之前采用的工作效率为30%的GaAs功率放大器有了显著的提高。可见在今后的通信系统中,基于新一代半导体材料GaN的功率放大器有着非常好的应用前景。

In recent years,the requirement of power consumption is getting lower,and the space for the power amplifier getting smaller in wireless communication,radar and other fields,which requires the power amplifier to have higher efficiency and higher operating junction temperature. The new generation wide band gap semiconductor material GaN is able to meet the re-quirements. An S-band power amplifier based on CREE company′s GaN-based power amplifier tube CGH40045 was designed. In the design,power matching,heat dissipation and spurious suppression were considered. Final testing results show that within the bandwidth of 300 MHz,power gain≥50 dB,saturated output power≥46 dBm,efficiency≥50%. The efficiency has been im-proved more significantly,compared with the previous GaAs power amplifier with 30% efficiency. In future communication sys-tems,the power amplifiers based on the new generation semiconductor materials GaN have a very good application prospect.