Al掺杂对ZnO薄膜结构和光学性能的影响

The Effect of Al-Doped on the Structure and Optical Properties of ZnO Thin Films

研究了Al掺杂对采用直流磁控溅射方法制备的ZnO薄膜结构及光学性能的影响。X射线衍射结果揭示薄膜具有良好的C轴择优取向生长特性,同时,衬底温度对它们的透射谱和荧光谱有着明显影响,所有薄膜都有大于86%的可见光透过率和陡峭的本征吸收边,但ZAO薄膜的光学透过率略低。Al掺杂导致了更宽的光学带隙,光致发光光谱显示ZnO具有较强的近带本征吸收峰和深能级发射峰,但Al掺杂使得深能级发射峰降低。随着衬底温度的升高,近带边吸收峰蓝移,与光学带隙Eg变化趋势一致。

Investigates the influence of Al-doped on the structure and optical properties of ZnO（ZAO） thin films which prepared by direct current （dc） magnetron sputtering. The X-ray diffraction results reveal that the film has good Caxis preferred orientation growth characteristics, the substrate temperature influences obviously on the optical transmit- tance and photoluminescence （PL） spectra of both ZnO and ZAO films, and all films exhibit a transmittance higher than 86% in the visible region, while the optical transmittance of ZAO films is slightly smaller than that of ZnO films. Al-doping leads to a larger optical band gap （E） of the films, the near-band-edge （NBE） emission and deep-level （DL） emission are observed in pure ZnO thin films by PL measurement, however the DL emission of the thin films is depressed with Al-doping. As the substrate temperature increases, the peak of NBE emission has a blueshift to region of higher photon energy, which shows a trend similar to the E in optical transmittance measurement