摘要
用电子束蒸发法在熔融石英基底上沉积了适用于248nm的HfO2/SiO2高反膜,为提高其抗激光损伤能力,设计并制备了两种保护层,一种是在常规高反膜系的基础上镀制二分之一波长厚度的SiO2保护层,另一种是用Al2O3/MgF2做保护层。测试了3种高反膜样品的激光损伤情况,通过损伤形貌的变化分析了两种保护层使抗激光损伤能力提高的原因以及存在的问题。
HfOs SiO2 high reflection（HR） films with conventional quarterwave design were deposited by electron beam e- vaporation on fused silica substrate for the wavelength 248 nm. Two kinds of protective layer were designed and prepared to resist laser induced damage. For one sample half wavelength thick SiO2 were deposited on conventional quarterwave （HL）11 H films as a protective layer, for the other sample A12O3/MgF2 coatings were deposited as protective layers. Laser induced damage were tested. Through changes of the damage morphology, causes of laser resistance improvement and problems still exist were ana- lyzed.
出处
《强激光与粒子束》
EI
CAS
CSCD
北大核心
2014年第8期77-80,共4页
High Power Laser and Particle Beams
基金
国家自然科学基金项目(61205138)
