摘要
介绍了Rymaszewski四探针法测薄膜方块电阻原理,设计并搭建了可测室温到550℃的四探针测试仪。该系统可在保护气体下变温测量薄层电阻,弥补了四探针法在较高温度测量薄膜电阻率的不足。制备并测试了多晶硅及铂薄膜的电阻温度特性,用多项式拟合了在该温度范围内电阻温度系数,并分析了方法可靠性。
The principle of Rymaszewski＇ s formulas for four-point probe method to measure thin-film resistance was described. A four-point probe method system was designed and built that can measure thin-film resistance at the temperature from normal atmospheric temperature to 550℃. This system can measure thin-film resistance at a changing temperature within protective gas, and makes up the weak point of four-point probe method at a high tem- perature. This paper prepares poly-silicon film and platinum film, and tests their resistance-temperature characteristics. It matches the temperature coefficient of resistance by polynomial. At last it analysis the reliability of the new method.
出处
《科学技术与工程》
北大核心
2014年第21期234-238,共5页
Science Technology and Engineering
