磁控溅射制备非晶硅薄膜的均匀性及光学吸收特性研究

Investigation on the Uniformity and Optical Absorption Properties of Amorphous Si Thin Films Prepared by RF Magnetron Sputtering

利用射频磁控溅射镀膜技术,采用不同的衬底温度及射频功率在玻璃衬底上制备了非晶硅薄膜;利用X射线衍射仪、拉曼(Raman)散射仪、台阶仪、紫外-可见光-近红外分光光度计及SPSS统计分析方法研究了衬底温度及射频功率对薄膜均匀性及其光学吸收特性的影响。结果表明:衬底温度从150℃增加到200℃,薄膜的生长速率加快、均匀性降低、光学吸收强度增加,从200℃再增加到250℃,薄膜的生长速率降低、均匀性下降、光学吸收强度减弱;射频功率从90 W增加到100 W,薄膜的生长速率加快、均匀性增加、光学吸收强度增加,从100 W再增加到110 W,则薄膜的生长速率降低,均匀性降低、光学吸收强度降低;获得了优化的非晶硅薄膜的制备工艺:射频功率100 W,衬底温度200℃。

Amorphous silicon films were prepared by RF magnetron sputtering based on glass with different substrate temperature and RF power. The effect of uniformity and optical properties of thin films by substrate temperature and RF power were analyzed by X-ray diffraction（XRD） instrument,Raman scattering instrument,Level meter,UV-Visible-NIR Spectroph and SPSS statistical analysis techniques.The results show that with the substrate temperature increasing from 150 ℃ to 200 ℃,the growth rate accelerated,uniformity decreased and optical absorption intensity increased. However,with the substrate temperature increasing from 200 ℃ to 250 ℃,the growth rate,uniformity and optical absorption intensity of film decreased. As RF power increased from 90 W to 100 W,the growth rate,uniformity and optical absorption intensity of film increased; but the growth rate,uniformity and optical absorption intensity of film decreased with RF power increasing from 100 W to 110 W. The optimal preparation parameters with the power of 100 W and the substrate temperature of 200 ℃ were obtained.