ZnO多晶原料的提纯研究

Study on Purification of ZnO Crystalline Raw Material

采用石墨辅助化学气相运输法,对ZnO多晶原料进行提纯研究。通过反应机理分析和热失重(TG)实验,发现ZnO-C体系初始反应温度约为1000℃,在1200℃反应速率急剧增加,由此设计出提纯温场。在真空封结的石英安瓿中,通过反应、输运和重结晶过程,得到致密ZnO晶锭,呈淡黄色;X射线衍射谱与标准谱符合较好,无杂峰;等离子体质谱仪(ICP-MS)测试显示,晶锭中的杂质离子(尤其Ag、Cu、Pb等对器件影响较大的深能级、多能级重金属离子)明显减少。采用化学气相法提纯后的多晶体,可成为制备各种ZnO光电器件的高纯原料。

Purification of ZnO crystalline raw material by graphite assistant chemical vapor transport method was studied. The results of reaction mechanism analysis and TG experiment indicate that the reaction temperature of ZnO-C system is about 1000 ℃ and reaction rate increases sharply when temperature reaches to 1200 ℃. Therefore,the temperature field was devised. In the vacuum-sealed quartz ampoule,a yellow ZnO crystal ingot was obtained by reaction,transport and recrystallization. Xray diffraction spectrum coincide with the standard spectrum. ICP-MS test shows that the impurity ions of ZnO decreases significantly,especially for deep level and multiple levels of heavy metal ions,such as Ag,Cu,Pb,etc. The ZnO polycrystal obtained by chemical vapor phase transport method can be used as high-purity raw materials to manufacture various kinds of photoelectric component.