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RSn_(3-x)Co_x(R=Nd,Sm)系列化合物的结构及磁性能研究

Structure and Magnetic Properties of RSn_(3-x)Co_x (R=Nd,Sm)Compounds
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摘要 系统地研究了新型稀土-半导体-磁性金属所组成的RSn3-xCox(R=Nd,Sm; x=0~0.3)系列的制备、晶体结构以及磁性.研究表明:RSn3-xCox具有AuCu3型立方结构,空间群Pm3m,稀土原子占据la晶位,Sn占据3c晶位,Co部分替代Sn占据3c晶位.点阵常数与晶胞体积常数随Co掺杂量的增加而减小.其磁性变化与Co含量密切相关,随着Co含量的增加,稀土半导体化合物中产生铁磁性相,在Sm-Sn-Co体系中SmSn2.8 Co0.2呈现混合磁性、SmSn2.7Co0.3呈现铁磁性,这有别于纯RSn3系列的磁性(低温反铁磁型和室温的顺磁性),为这类稀土半导体化合物作为新型磁电子材料的潜在应用提供了可能性. The synthesis and crystal structure & magnetic 0.3) compounds in rare earth-semiconductor-3d transition metal properties of novel RSn3-x Cox ( R= Nd, Sm; x = O-- ternary system were systematically investigated. It reveals that RSn3-xCox crystallizes in cubic AuCua type structure with a space group of Pm^-3m. The 1a and 3c crystal positions are occupied by R and (Sn,Co) atoms respectively. Co substitution for Sn prefers to occupy the 3c site. The lattice parameters and unit cells volumes decrease with increasing Co contents in compounds. The magnetic properties of RSn3-x Cox (R= Nd, Sm) are sensitive to Co doping contents. The paramagnetic, mixture of ferromagnetic and para- magnetic, and ferromagnetic are observed in SmSn3-x Cox (x≤0. 1), SmSn2.8 Co0.2 and SmSn2.7 Co0. 3, respectively. Co doping in RSna induces the presence of ferromagnetic phase in compounds, which is totally different from those of pure binary RSna (low temperature antiferromagnetic and paramagnetic at room temperature). This study supplies the pos- sibility for their potential application as novel magneto-electronic material.
出处 《材料导报》 EI CAS CSCD 北大核心 2014年第14期72-76,共5页 Materials Reports
基金 国家自然科学基金(11274110)
关键词 磁性半导体 RSn3-xCox化合物 磁性 magnetic semiconductor, RSn3-xCox compounds, magnetic properties
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参考文献19

  • 1程功,杨青林,嵇天浩.稀释磁性半导体在纳米材料领域的研究进展[J].化学通报,2006,69(1):W079.
  • 2Grunberg P, Schreiber R, Pang Y, et al. Layered magnetic structures: Evidence for antiferromagnetic coupling of Fe layers across Cr interlayers[J]. Phys Rev Lett, 1986, 57 (19) : 2442.
  • 3Schmidt G. Concepts for spin injection into semiconductors [J], J Phys D Appl Phys: Rev,2005,38(A239):R107.
  • 4Moodera J S, Kinder L R, Wong T M, et al. Large magne- toresistance at RT in ferromagnetic thin film tunnel junc- tions[J]. Phys Rev Lett: Meservey R,1995,74(16) :3273.
  • 5Von Molnar S, Methfessel S. Giant negative magnetoresis- tance in ferromagnetic Eul-x GdSe[J]. J Appl Phys, 1967, 38(13) :959.
  • 6Matthias B T, Bozorth R M, Van Vleck J H. Ferromagne- tic interaction in EuO [J]. Phys Rev Lett, 1961,7 (5) : 160.
  • 7Dietl T, Andrearczyk T, Lipinska A, et al. Origin of ferro- magnetism in Znlt-x CoxO from magnetization and spin-de- pendent magnetoresistance measurements[J]. Phys Rev B, 2007,76(15) : 155312.
  • 8Chen G, Zeng F, Pan F. Enhanced spin injection and vol- tage bias in (Zn, Co)/O/MgO/(Zn, Co) O magnetic tunnel junctions[J]. Appl Phys Lett, 2009,95(23) : 232508.
  • 9Dietl T, Ohno H, Matsukura F, et al. Zener model descrip- tion of ferromagnetism in zinc-blende magnetic semiconduc- tors[J]. Science,2000,287(5455) :1019.
  • 10Dietl T, Moss T S, Mahajan S. Diluted magnetic semicon- ductors[M]. North Holland: Handbook of Semiconductors, 1994.

二级参考文献8

  • 1VON MOLNAR S, METHFESSEL S. Giant negative magnetoresistance in ferromagnetic Eu1-xGdxSe [ J ]. Journal of Applied Physics, 1967, 38 : 959-964. Doi:10. 1063/1. 1709702.
  • 2MATTHIAS B T, BOZORTH R M. Ferromagnetic inter- action in EuO [ J ]. Physical Review Letters 1961,7:160- 1961. DOI: 10. 1103/PhysRevLett. 7. 160.
  • 3OHNO H. Making nonmagnetic semiconductors ferromag- netic [J]. Science, 1998,281: 951-956. Doi: 10. 1126/ science. 281. 5379. 951.
  • 4MATSUMOTO Y, MURAKAMI M, SHONO T, et al. Room-temperature ferromagnetism in transparent transi- tion metal-doped titanium dioxide [ J]. Science, 2001, 291:854. Doi: 10. 1126/science. 1056186.
  • 5YAN Shishen, REN C, WANG X, et al. Ferromagnetism and magnetoresistance of Co-ZnO inhomogeneous mag- netic semiconductor[J]. Applied Physics Letters, 2004, 84:2376-2378. Doi: 10. 1063/1. 1690881.
  • 6SONG Hongqiang, MEI Liangmo, YAN Shishen, et al. Microstructure, ferromagnetism, and magnetic transport of Ti1 -x COxO2 amorphous magnetic semiconductor [ J ]. Journal of Applied Physics, 2006 (99): 123903.1-5. Doi: 10. 1063/1. 2204758.
  • 7YAN Shishen, LIU J P, MEI Liangmo, et al, Spin-de- pendent variable range hopping and magnetoresistance in Ti1-x COxO2 and Zn1-x CoxO magnetic semiconductor films [ J ]. Journal of Physics : Condensed Matter, 2006, 18 (46) : 10469-10480. Doi: 10. 1088/0953-8984/18/ 46/014.
  • 8TIAN Yufeng, YAN Shishen, ZHANG Yunpeng, et al. Transformation of electrical transport from variable range hopping to hard gap resistance in Zn1-xFexO1-v magnetic semiconductor films [ J ]. Journal of Applied Physics,2006,100 : 103901.1-6. Doi: 10. 1063/1. 2386925.

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