单芯片大功率RFLDMOS晶体管设计与实验

Design and Experiment of Single High Power RF LDMOS Device

传统射频LDMOS晶体管的源区采用重掺杂p+sinker结构,该结构会占据较大的芯片面积。文中采用槽型sinker结构,可将源区sinker面积减少1/3以上。通过流片实验,得到饱和电流为170 mA/mm、击穿电压120 V、截止频率和最大振荡频率分别为5.5 GHz和10 GHz的RF LDMOS器件。在50 V工作电压、1 090 MHz频点下栅宽345 mm单芯片器件的最大输出功率362 W,功率增益15.6 dB,漏极效率38.1%。

In conventional RF LDMOS structure the source region is formed by high dose p＋ sinker, which much of the chip area would be consumed by. In this paper, we use trench type sinker structure can reduce the sinker area more than one-third. By tapeout experiment, a RF LDMOS device with 170 mA/mm Saturation current, 120 V breakdown voltage, 5.5 GHz cut-off frequency and 10 GHz max oscillator frequency was achieved; The single device of 345 mm poly width working at 50 V voltage and 1 090 MHz frequency can provide 362 W peak power with 15.6 dB power gain and 38.1% drain efficiency.