基于TRL校准的低噪声放大器的研究与设计

Research and design of low noise amplifier based on the TRL calibration

针对低噪声放大器实际电路往往和仿真结果出入较大、调试困难等特征,以TRL校准件和芯片量测板为平台量测出芯片的S参数,通过和厂商提供的S参数比拟,在此基础上通过射频仿真软件设计出的低噪声放大器,在实际测试中和仿真结果比较接近,大大提高了低噪声放大器设计的效率和性能。最后以GPS和北斗为例,给出了实测和仿真的S参数Smith圆图比对结果。

As the difference between the software simulation results and actual circuit results of low noise amplifiers, it is hard to debug the hardware system. In this paper, a new method is proposed to solve this problem. The S parameters can be measured by TRL calibration and chip measuring board platform. Through comparing it with S parameters supported by vendor, low noise amplifiers can be desiged by RF simulation software. In this way, the simulation results and actual test results are closer, which greatly improves the efficiency and performance of the low noise amplifier design. Finally it take GPS and Bei-Dou as examples, and the S parameters of measured and simulated Smith chart are compared.