摘要
The growth of GaAs nanowires directly on fused quartz substrates using molecular beam epitaxy via a vapor-liquid-solid mechanism with gold as catalyst is reported. Unlike conventional Au-catalyst MBE growth of nanowires （NWs） on GaAs substrates, zinc blende is found to be the dominant crystal structure for NWs grown on fused-quartz substrates by MBE. Further transmission electron microscopy measurements show that the prepared ZB NWs have the growth direction of [112] and lamellar { 111 } twins extend through the length of NWs. Although there are longitudinal planar defects that extend through NWs, the narrow full width at half maximum of PL implies high crystal quality of NWs grown on fused-quartz substrates.
The growth of GaAs nanowires directly on fused quartz substrates using molecular beam epitaxy via a vapor-liquid-solid mechanism with gold as catalyst is reported. Unlike conventional Au-catalyst MBE growth of nanowires （NWs） on GaAs substrates, zinc blende is found to be the dominant crystal structure for NWs grown on fused-quartz substrates by MBE. Further transmission electron microscopy measurements show that the prepared ZB NWs have the growth direction of [112] and lamellar { 111 } twins extend through the length of NWs. Although there are longitudinal planar defects that extend through NWs, the narrow full width at half maximum of PL implies high crystal quality of NWs grown on fused-quartz substrates.
基金
Project supported by the National Natural Science Foundation of China(Nos.11104271,11179042)
