摘要
Abstract： This paper reports a new material, indium-doped ZnS （ZnS：In） film, which is fabricated for the first time to improve its electrical and optical performance. By electron beam evaporation technology and the optimized annealing treatment, high quality ZnS：In film is prepared. XRD indicates that the incorporation of 6 at.% indium atoms into ZnS film causes little lattice deformation. The AFM results imply that large sized particles are compactly dispersed in the ZnS：In layer and results in an unsmooth surface. Electrical and optical property tests show that the resistivity of ZnS film is greatly decreased to 4.46×10-2 Ω.cm and the optical transmittance is improved to 85% in the visible region. Comparing with the results in other literatures, significant progress in electrical/optical performance has been made in this paper.
Abstract： This paper reports a new material, indium-doped ZnS （ZnS：In） film, which is fabricated for the first time to improve its electrical and optical performance. By electron beam evaporation technology and the optimized annealing treatment, high quality ZnS：In film is prepared. XRD indicates that the incorporation of 6 at.% indium atoms into ZnS film causes little lattice deformation. The AFM results imply that large sized particles are compactly dispersed in the ZnS：In layer and results in an unsmooth surface. Electrical and optical property tests show that the resistivity of ZnS film is greatly decreased to 4.46×10-2 Ω.cm and the optical transmittance is improved to 85% in the visible region. Comparing with the results in other literatures, significant progress in electrical/optical performance has been made in this paper.
基金
Project supported by the National Natural Science Foundation of China(No.61006006)
the Natural Science Foundations of Fujian Province(Nos.2009J05146,2012J01269)
