摘要
Considering the impacts of ideal factor n, VBE and band gap changes with the temperature on current gain, the current gain expression has been corrected to make the results closer to the actual test. Besides, the accelerating lifetime study method in the constant temperature-humidity stress is used to estimate the reliability of the same batch transistors. Applying the revised findings from the expression, the current gains before and after the test are compared and analyzed, and, according to the degradation data of the current gain, the transistor lifetimes in the test stress are respectively extrapolated in the different failure criteria.
Considering the impacts of ideal factor n, VBE and band gap changes with the temperature on current gain, the current gain expression has been corrected to make the results closer to the actual test. Besides, the accelerating lifetime study method in the constant temperature-humidity stress is used to estimate the reliability of the same batch transistors. Applying the revised findings from the expression, the current gains before and after the test are compared and analyzed, and, according to the degradation data of the current gain, the transistor lifetimes in the test stress are respectively extrapolated in the different failure criteria.
