溶剂蒸汽辅助制备超薄PVP栅介质膜及性能研究

Fabrication and properties of ultra-thin PVP gate dielectrics films by solvent-vapor-assisted process

使用溶剂蒸汽辅助制备超薄PVP栅介质膜,得到了低漏电流密度(E=1 MV/cm时,为1.12×10-9A/cm2;E=2 MV/cm时,为5.42×10-9A/cm2)、膜厚为10 nm的超薄PVP栅介质膜,其单位面积栅电容达到了566 nF/cm2。此外,AFM测试表明溶剂蒸汽辅助退火使薄膜表面粗糙度由0.36 nm降到了0.21 nm,空间电荷限制电流法(SCLC)的分析结果表明薄膜体内陷阱密度减少了26%。

The ultra-thin PVP gate dielectrics films were fabricated by the solvent-vapor-assisted process.Based on this approach,the PVP films had low leakage current density （1.12 ×10-9A/cm2 at 1 MV/cm;5.42 ×10-9A/cm2 at 2 MV/cm）when their thickness were 10 nm,and the capacitance per unit reached to 566 nF/cm2 .Furthermore,the surface roughness were decreased from 0.36 to 0.21 nm after the solvent vapor-assisted annealing,and the trap density in films were decreased by 26% analyzed by SCLC.