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一种基于悬浮吸收层的双层结构的热电堆红外探测器(英文)

Design of Thermopile-Based Infrared Detectors with Suspended Absorber-Thermopile Bi-Layers
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摘要 提出一种新颖红外传感器,这种传感器采用悬浮吸收层的双层结构的优势,来实现相对小尺寸下的高探测性能。双层结构采用2种牺牲层材料,分别为聚酰亚胺牺牲层和预埋在热偶条和沉底之间的多晶硅材料。仿真结果证明了该种结构的探测率、响应率和响应时间分别达到2.85×108cm Hz(1/2)/W、1 800 V/W和6 ms。本文给出了该种热电堆红外探测器高度兼容于CMOS工艺的制备流程,使器件的高效量产和低成本生产成为可能。 A novel infrared ( IR ) detector is designed and presented. The detector takes advantage of suspended absorber-thermopile bi-layers to achieve high performance with a relatively small size. The bi-layers are realized by using two separated sacrificial layers, which include a Poly-Si film beneath the thermopiles and a polyimide deposition over the thermopiles. Simulation results demonstrate that the detectivity,responsibility and response time of the IR detectors can reach 2. 85×10^8 cmHz(1/2)/W,1 800 V/W and 6 ms,respectively. Moreover,the fabrication of the IR detector is highly compatible with standard CMOS process, which as a result, makes the high-yield and low-cost production possible.
出处 《传感技术学报》 CAS CSCD 北大核心 2014年第6期730-735,共6页 Chinese Journal of Sensors and Actuators
基金 国家自然科学基金项目(61335008,51205373) 江苏省自然科学基金项目(BK20131098) 山西省自然科学基金项目(2012021013-4)
关键词 红外探测器 双层结构 热电堆 吸收层 悬浮 红外传感器 多晶硅材料 CMOS工艺 infrared thermopiles suspended absorber-thermopile bi-layers polyimide front-etching CMOS process
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