SiOx(x=1.3)薄膜的优化阻变特性与退火温度的关系探究

Dependence of annealing temperatures on the optimized resistive switching behavior from SiO_x(x = 1.3) films

采用电子束蒸发技术在Si衬底上制备了亚氧化硅SiOx(x=1.3)薄膜,研究了不同温度热退火处理的SiOx薄膜作为阻变层的ITO/SiOx/Si/Al结构的阻变特性.研究发现,在电极尺寸相同的条件下,随着退火温度的增加,该结构的高低阻态比显著提高,最高可达109.X射线光电子能谱和电子顺磁共振能谱的分析表明,不同退火温度下形成的不同价态的硅悬挂键是低阻态下细丝通道的主要来源.椭偏仪的测试结果表明,经过热退火处理的SiOx薄膜折射率的增大是导致高阻态下器件电阻增大的原因.

SiOx films （x=1.3） are deposited on the silicon substrates by electron beam evaporation. The resistive switching behaviors from the device consisting of indium tin oxide （ITO）/SiOx/Si/Al with annealed SiOx layer as the resistive layer are investigated. It is found that on/off ratio of the device increases with the annealing temperature rising. The maximum on/off ratio reaches 109. The analyses of X-ray photoelectron spectrum and electron paramagnetic resonance spectrum reveal that the silicon dangling bonds in different valence states can be formed at different annealing temperatures, which is the main source of the conducting filament pathway. The result of ellipsometer indicates that the increase of refractive index of annealed SiOx film leads to the increase of the resistance of high resistance state.