不同扩散掩膜方式对InGaAs平面探测器性能影响研究(英文)

Performance of InGaAs detector with SiN diffusion mask

测量了不同扩散掩膜生长方式的截止波长为1.70μm的InGaAs平面探测器的电学性能.其中,SiNx薄膜作为扩散掩膜,分别采用等离子体化学气相沉积（PECVD）和低温诱导耦合等离子体化学气相沉积（ICPCVD）生长.探测器焊接在杜瓦里测量,结果显示采用两种掩膜方式的器件的平均峰值响应率、探测率和量子效率分别为0.73和0.78 A/W,6.20E11和6.32E11cmHz1/2W-1,56.0%和62.0%;两种器件的响应波段分别为1.63~1.68μm和1.62~1.69μm;平均暗电流密度分别为312.9 nA/cm2和206 nA/cm2.通过理论分析两种器件的暗电流成分,结果显示,相对于采用PECVD作为扩散掩膜生长方式而言,采用ICP-CVD作为扩散掩膜生长方式大大降低了器件的欧姆暗电流成分.

The InGaAs planar detectors with SiNx film as diffusion mask were fabricated SiNx films were grown by plasma enhanced chemical vapor deposition（PECVD） or by low temperature ICP-CVD inductively coupled plasma chemical vapor deposition（ ICP- CVD）. The photoelectric responses of the detectors made with the two methods were investigated. It turns out that the two kinds of devices have similar performance in the average response rate 0.73 and 0.78 A/W, the average peak detectivity 6.20E11 and 6.32E11 cmHzl/2W-1, and the quantum efficien- cy 56.0% and 62.0% , respectively. ＂However, the average dark current densities of the detectors is much different, with the values of 312.9 nA/cm2 and 206 nA/cm2 （ -0.1 V） , respectively. By fitting with experimental data to electrical transport theory, the mechanism of dark current was analyzed. The results indicate that the device using SiNx deposited by ICP-CVD has reduced ohmic dark current in comparison with devices with SiNx deposited by PECVD.