摘要
The photoluminescence(PL)dynamics of nano-silicon prepared in various environments is investigated,which involves the emission in nanostructures related to a wider band from 550 nm to 900 nm and the localized states emission at 694 nm,605 nm,604 nm and 560 nm.It is observed that the sharp PL peak on the samples prepared in nitrogen has the shape of single tip near 605 nm,but the shape of twin tips always occurs in the two sharp peaks on the samples prepared in oxygen.The threshold behavior and the optical gain are discovered in the PL emission at 694 nm,605 nm and 604 nm.The experiments demonstrate that the optimum pressure to prepare samples in oxygen for the enhancement of emission near 700 nm is about 10~100 Pa,and the optimum one in oxygen for the enhancement of emission near 600 nm is about 1/10~1 Pa,while in high vacuum(<10μPa) the PL emission becomes weaker.
The photoluminescence（ PL） dynamics of nano-silicon prepared in various environments is investigated,which involves the emission in nanostructures related to a wider band from 550 nm to 900 nm and the localized states emission at 694 nm,605 nm,604 nm and 560 nm. It is observed that the sharp PL peak on the samples prepared in nitrogen has the shape of single tip near 605 nm,but the shape of twin tips always occurs in the two sharp peaks on the samples prepared in oxygen. The threshold behavior and the optical gain are discovered in the PL emission at 694 nm,605 nm and 604 nm. The experiments demonstrate that the optimum pressure to prepare samples in oxygen for the enhancement of emission near 700 nm is about 10 - 100 Pa,and the optimum one in oxygen for the enhancement of emission near 600 nm is about 1 /10 - 1 Pa,while in high vacuum（ 10 μPa） the PL emission becomes weaker.
出处
《贵州科学》
2014年第5期23-30,共8页
Guizhou Science
基金
National Natural Science Foundation of China(Grant No.11264007)
关键词
物理学
物理理论
发展
光学
nano-silicon
photoluminescence
surface bonds
localized levels
