摘要
Dynamics of photoluminescence(PL) and electroluminescence(EL) on nanosilicon deposited by Yb is investigated.The sharper PL peaks near 700 nm are observed on silicon quantum dots (Si QDs) coated by Yb.The enhanced EL peaks in the wavelength region from 1 200 nm to 1 600 nm are measured on silicon film deposited by Yb.It is discovered that the EL intensity enhances and the peaks number increases with increasing number of Si-Yb layers.The emission wavelength could be manipulated into the window of optical communication by SiYb bonding on nanosilicon.Si-Yb quantum cascade and PIN hybrid light-emitting diode is designed to apply in optical communicating,which is suitable to be integrated on silicon chip.
Dynamics of photoluminescence（ PL） and electroluminescence（ EL） on nanosilicon deposited by Yb is investigated. The sharper PL peaks near 700 nm are observed on silicon quantum dots（ Si QDs） coated by Yb. The enhanced EL peaks in the wavelength region from 1 200 nm to 1 600 nm are measured on silicon film deposited by Yb. It is discovered that the EL intensity enhances and the peaks number increases with increasing number of Si-Yb layers. The emission wavelength could be manipulated into the window of optical communication by SiYb bonding on nanosilicon. Si-Yb quantum cascade and PIN hybrid light-emitting diode is designed to apply in optical communicating,which is suitable to be integrated on silicon chip.
出处
《贵州科学》
2014年第5期31-37,共7页
Guizhou Science
基金
National Natural Science Foundation of China(Grant No.11264007)
关键词
光学
理论
物理学
发展
photoluminescence
electroluminescence
manipulating wavelength
Si-Yb quantum cascade
