摘要
以（Mg0.8Zn0.2）TiO，（MZT）为原料，采用加入高电介质材料Ba4Nd28/3T18O54zBi2O3（BNT）制备微波电介质陶瓷0．7（Mg08Zn02）T103·0．3{Ba4Nd2Ⅳ3Ti18054·zBi203I（z=0．15，0．18，0．2），以提高MZT的介电性能。掺入Bi3＋可以降低烧结温度，从而可以在低烧结温度（（1200-1230％）下制取MZT和BNT的合成材料。通过对介电性能、密度、XRD和SEM测试所获得的陶瓷可以发现，掺入Bi3＋数量的多少和结烧温度的高低会影响到陶瓷的结构和性能，结果说明，当z=0．18，0．7（Mgn8znn2）Ti03·0．3{Ba4NdzsnTil8054·zBi203}的结烧温度为1230℃时，可以获得很好的介电性能：εr=35．56，Qf=5811GHz，TF=-3．225ppm／℃。
The （MgosZna2）TiO3 （MZT） as the foundation is Ba4NdTizsO54 zBi203 （BNT） to preparation microwave mainly studied to join high dielectric material dielectric ceramic 0.7（Mgo.sZno.2）TiO3.0.3 {Ba4Nd28/3TilsO54·zBi203}（z=O.15, 0.18, 0.2） to improve dielectric properties of MZT. While Bi3＋ could lower the sintering temperature to make MZT and BNT composite in a low sintering temperature （1200-1 230 ℃） . According to the results of the dielectric properties, density, XRD and SEM tests of the obtained ceramics, we can find out that the amount of doped Bi3＋ and the sintering temperature affected the structure and properties of the ceramics. The results show that when z=0.18, 0.7 （Mg0sZn zBi203} sintering at 1230℃ can get good dielectric properties： εr=35.56,Qf=5811GHz,TF=-3.225ppm/℃.
