摘要
太赫兹器件是太赫兹技术的核心。介绍了肖特基势垒二极管、耿氏二极管、碰撞雪崩渡越时间(IMPATT)二极管以及隧道渡越时间(TUNNETT)二极管四种典型太赫兹二极管的基本理论、器件结构和关键技术,分析了影响器件性能的主要因素,给出了优化改进器件性能的措施。阐述并比较了各种太赫兹二极管的特点以及同一种结构不同材料的太赫兹二极管特性,通过对比得出各自的优缺点及适用范围。分类总结了四种不同类型太赫兹二极管的研究进展和它们相应的应用。基于器件结构和先进的半导体材料特性,指出了不同类型太赫兹二极管的未来发展方向,描述了不同类型太赫兹二极管的应用和前景。
The THz device is the core of the THz technology. The basic theory, device structure and key technology of four typical THz diodes such as Schottky barrier diode, Gunn diode, im- pact avalanche transit time （IMPATT） diode and tunnel injection transit time （TUNNETT） diode are introduced. The main influence factors of the device performances are analyzed. The op- timization and improvement measures for the device performances are presented. The characteris- tics of various THz diodes and the same structure THz diodes with different materials are illustra- ted and compared, and the advantages and disadvantages of various THz diodes are obtained. The research progresses and suitable applications of four types THz diodes are classified and summa- rized. Based on the device structures and advanced material characteristics, the future develop- ment directions of different THz diodes are presented, and applications and prospects of different THz diodes are described.
出处
《微纳电子技术》
CAS
北大核心
2014年第8期489-497,共9页
Micronanoelectronic Technology
