IGBT驱动有源钳位电路的研究

Research on Active Clamping Circuit of IGBT Driver

有源钳位电路可以有效地抑制绝缘栅双极型晶体管(insulated gate bipolar transistor,IGBT)关断时的尖峰电压,但是有源钳位电路的频繁动作会增大损耗,危及整个系统的安全。所以在对传统的有源钳位电路模型进行电路分析的基础上,提出了一种优化的有源钳位电路,分析比较了两种有源钳位电路关断时的暂态过程,建立了相应的损耗分析模型,对两种电路进行定性损耗分析的计算。最后通过Pspice的定量仿真实验,仿真与分析结果对比证实了所提出的开关模型和损耗模型的正确性。

Active clamping circuits can effectively suppress the voltage of insulated gate bipolar transistor （IGBT）. Therefore, long time conductions and frequent actions of the active clamping circuit lead to extremely high switching loss of the IGBT, which imperils the efficiency and safety of the system. An optimized active clamp circuit is proposed, which is based on the traditional model of the active clamp circuit analysis. The transient switching process of two active clamp circuits is compared to establish the corresponding loss analysis model and calculate the losses of two circuits. Pspice is used to simulate the switching process and analyze the losses. The proposed switching model and loss analysis model are validated by the simulation results.