摘要
选用酞菁铅作为有机半导体气敏材料,用真空热蒸镀、磁控溅射等镀膜方法制备器件,所制备薄膜二极管的结构为MgAl/PbPc/Cu,使用Keithley 4200半导体测试仪与气敏测量系统分析器件肖特基二极管的气敏特性,通过对电流-电压特性的实测数据进行深入的理论分析,比较出器件对不同浓度NO2气体的敏感程度.经过测试结果可知:当器件置于10-5的NO2气体74 min后,正向电流减小65倍,对应的MgAl/PbPc肖特基势垒高度约上升了20 meV.同时由于被吸附NO2气体的PbPc薄膜少数载流子电子数目的增加,导致器件的反向电流增加4倍.
Thin-film diode structure is MgAl/PbPc/Cu if lead phthalocyanine is taken as organic semiconductor gas-sensing material with methods such as vacuum thermal evaporation or magnetron sputtering. Using Keithley 4200 semiconductor instrument and gas-sensing measurement system to analyze gas-sensing characteristic of Schottky diode device, the sensitive degree of NO2 with different densities can be compared through theoretical analysis of measured current and voltage data. The measurement result shows that when the device is placed in 10ppm NO2 environment, after 74 minutes, forward current decreased by 65 times, and the corresponding MgAl/PbPc Schottky barrier height rises about 20meV. Reversed current of the device is 4 times larger because the increase of minority carrier electron number in PbPc thin-film is absorbed by NO2.
出处
《哈尔滨理工大学学报》
CAS
2014年第4期67-70,共4页
Journal of Harbin University of Science and Technology
基金
黑龙江省教育厅科学技术研究项目(12511120)
关键词
酞菁铅
薄膜二极管
气敏特性
NO2
lead phthalocyanine
thin-film diode
gas-sensing characteristics
NO2
