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PbTiO_3缓冲层对0.7BiFeO_3-0.3PbTiO_3薄膜电学性能的影响

Effect of PbTiO_3 buffer layer on electric properties of 0.7BiFeO_3-0.3PbTiO_3 thin film
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摘要 利用溶胶-凝胶法在LaNiO3/SiO2/Si衬底上分别制备出0.7BiFeO3-0.3PbTiO3(BFPT7030),PbTiO3(PT)-BFPT7030(BFPT7030-1、BFPT7030-2)薄膜。通过对薄膜进行XRD、AFM测试可知,薄膜均完全结晶,并呈现高度(100)择优取向,3种薄膜的表面平整,均方根粗糙度较小。通过介电性能、铁电性能及漏电流测试结果可知,增加有PT缓冲层的BFPT7030薄膜的介电性能、铁电性能有所改善,漏电流较小。其中BFPT7030-2薄膜的剩余极化最大,达到38μC/cm2。 Thin films of 0.7BiFeO3-0.3PbTiO3 (BFPT7030 ),PbTiO3 (PT)-BFPT7030 (BFPT7030-1,BF-PT7030-2)were prepared on LaNiO3/SiO2/Si substrate by sol-gel process.The test results of XRD and AFM show that the thin films were fully crystalized and reveal highly (100)preferred orientation.These thin films demonstrate smooth surface and the root-mean-squares (RMS)are small.The BFPT7030 thin films with PT buffer layer have improvement dielectric and ferroelectric properties from the test results,and the leakage cur-rent was less than the BFPT7030 thin film without PT buffer layer.The film of BFPT7030-2 demonstrate the largest remnant polarization of 38μC/cm2 .
出处 《功能材料》 EI CAS CSCD 北大核心 2014年第16期16026-16029,共4页 Journal of Functional Materials
基金 四川省教育厅重点资助项目(14ZA0046) 西南石油大学第十三期开放实验重点资助项目(KSZ13070)
关键词 溶胶-凝胶 BIFEO3 铁电 介电 漏电流 Buffer layers Dielectric materials Ferroelectric films Ferroelectric materials Ferroelectricity Leakage currents Sol gel process
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