硅片的超声流体喷射抛光实验研究

Experimental Research on Ultrasonic Fluid Jet Polishing of Silicon Wafer

基于兆赫级压电振子驱动提出,一种新的流体喷射抛光方法,利用Z4120台式钻床搭建了流体喷射超声抛光实验装置,以2吋硅片为喷射抛光对象,通过实验验证了该抛光方法对硅片的精密化学机械抛光的实际效果。实验结果表明,在相同的实验工况下,硅片与喷射流的相对转速越高,抛光的效果越好。硅片转速相比抛光时间对硅片表面的粗糙度影响效果更明显。该抛光方法因无须借助抛光垫的接触作用,能使硅片在精密抛光过程中,避免抛光工具对硅片表面的损伤。

A new method of fluid jet polishing driven by megahertz piezoelectric vibrator is put forward, and an experimenteddevice of ultrasonic fluid jet polishing is set up using Z4120 bench drilling machine which uses 2 inch silicon, wafer ,for polishing object, and the polishing method is verified by experiments of precision chemical mechanical polishing of siliconu,afer. The experimental results show that, in the sarae experiment conditions, the relative speed between silicon wafer and jet current is higher, and the effect of polishing is better. Effect of revolving speed to surfiwe roughness af silicon wafer is more obvious than polishing time. The suorace damage of silicon wafer polished with this method could be avoided in that the silicon wafer dose not touch with the polishing tools during polishing.