摘要
设计了一种新颖的LDO限流保护电路。该保护电路结构简单,由5个MOS管构成,其静态电流约200 nA。对该保护电路的原理进行了详细的分析和仿真验证。该LDO采用0.6μm SOI工艺流片,测试结果表明,该LDO具有稳定的限流保护功能。
A new current limit protection circuit for LDO is designed. The protection circuit with a simple structure has five MOS transistors, and its quiescent current is approximate 200 nA. The principle of this circuit has been analysed in detail and the simulation has been validated. The chip design is based on a 0.6 μm SO1 process, and the test results show that the LDO has a stable current limit protection function.
出处
《微电子学》
CAS
CSCD
北大核心
2014年第4期476-478,482,共4页
Microelectronics
关键词
LDO
限流保护电路
LDO Current limit protection circuit