硅化钨MIP电容侧墙淀积工艺优化

Tungsten Silicide MIP Capacitor Sidewall Process Optimization

硅化钨MIP工艺在集成电路和半导体器件制造中有着广泛的应用,但硅化钨膜在后续的侧墙工艺中容易出现剥落问题现象。通过对硅化钨材料特性,以及与电路制造相关联工艺的深入分析,发现在一定温度下,硅化钨的表面会产生富钨硅化物,它与氧气反应时会形成氧化钨,从而造成硅化钨膜的剥落。为避免氧化钨的形成,从减少富钨硅化物的形成、降低钨化硅与氧气的反应温度,以及减少参与反应的氧气量三个方面着手,在大量工艺试验的基础上提出了一种能有效防止硅化钨膜剥落的优化工艺。

Tungsten silicide（WSix） MIP （metal insulator poly capacitor） technique is widely applied in IC devices, but WSix film in the subsequent sidewall process is prone to peeling. Through the analysis of the WSix material properties and related process, it can be found that, the surface of the WSix can produce WsSi3 under a certain temperature. And WsSi3 silicide can react with oxygen to form tungsten oxide, which led to the peeling of WSix film. Experiments show that reducing the formation of WsSi3, lowering the reaction temperature of WSix and reducing the amount of oxygen in the reaction can inhibit the formation of tungsten oxide, thus effectively prevent the peeling of tungsten silicide film.