GaAs基量子点太阳能电池的制备与特性分析

Fabrication and Properties of GaAs Based Quantum Dots Solar Cells

本文在p-i-n基本电池结构引入量子点,比较了量子点太阳能电池材料对于太阳光谱吸收特性的影响。重点讨论了量子点太阳能电池中量子点尺寸不同的情况下,对于光谱吸收特性的影响。实验结果表明,GaAs基本电池材料吸收限在0.89μm,而加入较小尺寸量子点太阳能电池材料的吸收限扩大到1.09μm,而较大尺寸量子点电池材料的吸收限则扩大到1.26μm,实现了材料光谱响应范围的拓展,增加了光吸收范围。与不含量子点的GaAs基本参考电池相比,量子点太阳能电池的短路电流有所提高,开路电压明显降低。

In this paper,the effects of the spectral absorbance properties of solar cells materials are compared with the quantum dots being pulling in the reference p-i-n solar cells;and the spectral absorbance properties of the quantum dots（QDs） solar cells with different sizes are discussed. The results show that it is feasible to expand the scope of material spectral response up to 1.26μm with larger size quantum dots and improve light absorption by changing the size of the QDs. The light absorption of the reference cell is limited to 0.89μm,while the light absorption of QDs cells can be expanded up to 1.09μm with small size QDs,which the material spectral response and light absorption ranges are expanded. The photo-current of QDs solar cells are enhanced obviously and the open circuit voltage is decreased slightly with comparing to the reference solar cell grown without QDs.