雾化施液CMP工艺优化

Process Optimization of Atomizing Slurry Applied CMP

通过改进抛光雾液供液系统,结合超声波雾化技术对原雾化施液CMP实验系统进行优化,并进行了工艺实验。通过单因素试验研究雾化参数对抛光结果的影响,利用正交试验得到最优工艺参数组合,并在相同条件下将雾化抛光与传统抛光进行比较。结果表明:该实验系统的最优参数组合为雾化器电压50 V、抛光压力8 psi(1 psi=6 895 Pa)、抛光盘转速为70 r/min,此时材料去除速率为171.853 nm/min,表面粗糙度为4.76 nm。与传统抛光相比材料去除速率稍低,但表面粗糙度要好,且抛光液消耗量(1.03 g/min)约为传统抛光(10 g/min)的1/10。由于雾化器将抛光液中分子结构打散形成大量雾液,从而减少抛光液中磨粒团聚,同时雾化液更能均匀分散吸附在抛光垫上,增加了参与抛光的有效磨粒数,有利于材料去除和形成高质量表面。

The original atomization slurry applied CMP system,which makes use of the technology of ultrasonic atomization,is optimized,by improving its supply system,and the process experiments are conducted as well. The impact of atomization parameters on polishing effects were researched through single factor experiments; the best combination of process parameters via orthogonal experiments was acquired; the atomization CMP with the original one were compared under the same conditions. The results show that the best combination of process parameters are acquired. The voltage of the atomizer is 50 V,polishing pressure is 8 psi,rotating speed of polishing pad is 70 r /min,while the material removal rate（ MRR） is 171.853 nm/min,the surface roughness is 4.76 nm. The MRR of atomization CMP is a little lower than that of the original one,but its surface roughness is better to some degree,with its consumption of slurry（ 1. 03 g /min） is 1 /10 of that of the original one（ 10 g /min）. The atomizer breaks the molecular structure and produces large amounts of atomization slurry,decreasing the aggregation of abrasive particles. The atomization slurry uniformly attaches to the polishing pad,increasing the number of the effective particles that take part in polishing,which is beneficial to the removal of materials and the acquirement of the high quality surface.