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Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition

Influence of reaction parameters on synthesis of high-quality single-layer graphene on Cu using chemical vapor deposition
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摘要 Large-area monolayer graphene samples grown on polycrystalline copper foil by thermal chemical vapor deposition with differing CH4 flux and growth time are investigated by Raman spectra, scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. The defects, number of layers, and quality of graphene are shown to be controllable through tuning the reaction conditions: ideally to 2-3 sccm CH4 for 30 minutes. Large-area monolayer graphene samples grown on polycrystalline copper foil by thermal chemical vapor deposition with differing CH4 flux and growth time are investigated by Raman spectra, scanning electron microscopy, atomic force microscopy, and scanning tunneling microscopy. The defects, number of layers, and quality of graphene are shown to be controllable through tuning the reaction conditions: ideally to 2-3 sccm CH4 for 30 minutes.
出处 《Chinese Physics B》 SCIE EI CAS CSCD 2014年第9期1-5,共5页 中国物理B(英文版)
基金 supported by the National Basic Research Program of China(Grant Nos.2013CB933604,2010CB923004,and 2009CB929103) the National Natural Science Foundation of China the Chinese Academy of Sciences
关键词 GRAPHENE chemical vapor deposition Raman spectra graphene, chemical vapor deposition, Raman spectra
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