摘要
传统横向单向加载MEMS静电微执行器存在位移过小或驱动电压过大等问题.本文提出一种纵横双向加载的新型硅基静电执行器模型.基于拉格朗日-麦克斯韦方程建立了微执行器动力方程,分析了边缘漏电场对静电力的影响,基于龙格-库塔算法将所有轴向载荷等效为轴向集中载荷,并分别仿真得到了变形与驱动电压、调节电压和轴向挤压量之间的关系,结果表明当驱动电压仅为16 V时,位移高达10.861μm,远大于目前传统横向加载单向变形微执行器的位移量.通过微型制造工艺加工了微执行器,利用高频信号采集了横向极板间的电压变化量,验证了仿真结果.
Considering the problems of undersized displacement and oversized voltage in the MEMS elec- trostatic micro actuator of transverse loading, a silicon-based micro actuator model with characteristics of large-displacement and low-voltage was presented according to the principle of vertical-horizontal ben- ding. The dynamic equations of micro actuator with axial and transverse loading were built based on the Lagrange-Maxwell equations. The influence of edge leakage field on electrostatic force was analyzed. All of the axial loads were equivalently transformed into axial centralized load based on Runge-Kutta algo- rithm. The relationships between deformation and driving voltage, regulation voltage, and axial compression quantity were obtained by simulation separately. The simulation results show that the displacement reaches 10. 861μm when the driving voltage is 16 V, which is much larger than that of the existing micro actuators. The micro actuator was manufactured by micro fabrication technology. The simulation results are verified by comparing with the voltage variation realized by acquiring high frequency signal between transverse plates.
出处
《纳米技术与精密工程》
CAS
CSCD
2014年第5期334-339,共6页
Nanotechnology and Precision Engineering
基金
国家自然科学基金资助项目(61176130)
